Invention Grant
- Patent Title: Semiconductor memory and operating method of same
- Patent Title (中): 半导体存储器及其操作方法相同
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Application No.: US12005389Application Date: 2007-12-27
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Publication No.: US07649796B2Publication Date: 2010-01-19
- Inventor: Masaki Okuda , Atsushi Fujii
- Applicant: Masaki Okuda , Atsushi Fujii
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2006-352454 20061227
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory has a memory cell array having dynamic memory cells. An access control circuit accesses the memory cells in response to an access command which is supplied externally. A refresh control circuit generates, during a test mode, a test refresh request signal in synchronization with the access command so as to execute a refresh operation of the memory cells when a refresh mask signal is at an invalid level. Also, the refresh control circuit prohibits generation of the test refresh request signal when the refresh mask signal is at a valid level. The test refresh request signal is generated or prohibited from being generated according to the level of the refresh mask signal. Thus, only a refresh operation needed for a test can be executed, and hence test efficiency can be improved.
Public/Granted literature
- US20080159041A1 Semiconductor memory and operating method of same Public/Granted day:2008-07-03
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