Invention Grant
- Patent Title: Time-domain device noise simulator
- Patent Title (中): 时域设备噪声模拟器
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Application No.: US11395537Application Date: 2006-03-31
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Publication No.: US07650271B2Publication Date: 2010-01-19
- Inventor: Frank P. O'Mahony , Haydar Kutuk , Bryan K. Casper , Eyal Fayneh , Sivakumar Mudanai , Wei-kai Shih , Farag Fattouh
- Applicant: Frank P. O'Mahony , Haydar Kutuk , Bryan K. Casper , Eyal Fayneh , Sivakumar Mudanai , Wei-kai Shih , Farag Fattouh
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Ryder, Lu, Mazzeo and Konieczny, LLC
- Agent Douglas J. Ryder
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.
Public/Granted literature
- US20070233444A1 Time-domain device noise simulator Public/Granted day:2007-10-04
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