Invention Grant
- Patent Title: Method for forming multilayer substrate
- Patent Title (中): 多层基板的形成方法
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Application No.: US11173461Application Date: 2005-06-30
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Publication No.: US07650694B2Publication Date: 2010-01-26
- Inventor: Washington M. Mobley
- Applicant: Washington M. Mobley
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes & Victor LLP
- Agent Allan S. Raynes
- Main IPC: H05K3/46
- IPC: H05K3/46

Abstract:
Embodiments include electronic device substrates and methods for forming the same. A method for forming a package comprising a multilayer substrate includes forming a stack of a plurality of dielectric layers comprising a ceramic material, the stack including upper and lower dielectric layers. The method also includes providing a plurality of metallization lines on the dielectric layers in the stack. The method also includes forming a plurality of vias in the dielectric layers, the vias formed to include electrically conductive material therein. A first metal layer is formed on the upper dielectric layer, and a second metal layer is formed on the lower dielectric layer. The first metal layer and the second metal layer are each formed to be at least 250 μm thick. Other embodiments are described and claimed.
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