Invention Grant
US07651726B2 Process for obtaining silicon nitride (SI3N4) surface coatings on ceramic components and pieces
失效
用于获得陶瓷部件和件上的氮化硅(SI3N4)表面涂层的方法
- Patent Title: Process for obtaining silicon nitride (SI3N4) surface coatings on ceramic components and pieces
- Patent Title (中): 用于获得陶瓷部件和件上的氮化硅(SI3N4)表面涂层的方法
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Application No.: US10545985Application Date: 2004-02-18
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Publication No.: US07651726B2Publication Date: 2010-01-26
- Inventor: Alejandro Souto Serantes , Francisco Guitián Rivera , Javier Bullón Camarasa
- Applicant: Alejandro Souto Serantes , Francisco Guitián Rivera , Javier Bullón Camarasa
- Applicant Address: ES Santiago de Compostela
- Assignee: Universidade de Santiago de Compostela
- Current Assignee: Universidade de Santiago de Compostela
- Current Assignee Address: ES Santiago de Compostela
- Agency: Merchant & Gould P.C.
- Priority: ES200300434 20030221
- International Application: PCT/ES2004/000071 WO 20040218
- International Announcement: WO2004/074212 WO 20040902
- Main IPC: B05D3/00
- IPC: B05D3/00

Abstract:
A process of obtaining silicon nitride (Si3N4) surface coatings on ceramic pieces and components by impregnation of the surfaces of the ceramic pieces with silicon powder suspensions with a particle size preferably less than 200 μm. The thickness of the coatings depends on the impregnation time and on the properties of the slip and the ceramic piece. The subsequent nitridation of the coating by thermal treatment at temperatures between 1300° C. and 1500° C. in N2 atmospheres leads to a continuous Si3N4 coating. The chemical stability and compatibility between Si3N4 and molten silicon enables its application in silicon metallurgy, in manufacturing crucibles for silicon fusion or for housing said molten silicon, in manufacturing pipes and chutes for its transport or in manufacturing different components for its subsequent purification.
Public/Granted literature
- US20060251816A1 Method of obtaining surface coatings of silicon nitride(si3n4)on ceramic components and parts Public/Granted day:2006-11-09
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