Invention Grant
- Patent Title: Method for compensating critical dimension variations in photomasks
- Patent Title (中): 补偿光掩模中临界尺寸变化的方法
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Application No.: US12329628Application Date: 2008-12-07
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Publication No.: US07651824B1Publication Date: 2010-01-26
- Inventor: Hsuan-Ko Chen , Mei-Li Wang , Chih-Cheng Chin , Pei-Cheng Fan
- Applicant: Hsuan-Ko Chen , Mei-Li Wang , Chih-Cheng Chin , Pei-Cheng Fan
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu
- Priority: TW97133206A 20080829
- Main IPC: G03F9/00
- IPC: G03F9/00
Abstract:
A method for compensating critical dimension (CD) variations of patterns of a substrate, by the correcting the CD of the corresponding photomask is disclosed. First, a light and a main photomask are provided. Second, an auxiliary photomask including an auxiliary transparent substrate and a shading element within the auxiliary transparent substrate is provided. Next the light passes through the auxiliary photomask and main photomask in order for compensating CD variations of patterns corresponding to main photomask.
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