Invention Grant
- Patent Title: Semiconductor device, fabricating method thereof, and photomask
- Patent Title (中): 半导体器件,其制造方法和光掩模
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Application No.: US11291318Application Date: 2005-11-30
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Publication No.: US07651826B2Publication Date: 2010-01-26
- Inventor: Mika Takahara , Tohru Higashi , Shigehiro Toyoda
- Applicant: Mika Takahara , Tohru Higashi , Shigehiro Toyoda
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F9/00

Abstract:
There is provided a semiconductor device including a wafer and a focus monitoring pattern formed on the wafer. The focus monitoring pattern having at least one pair of first and second patterns, and the first pattern has an unexposed region surrounded by an exposed region, and the second pattern has an exposed region surrounded by an unexposed region. In addition, the present invention provides a method of fabricating a semiconductor device comprising the steps of forming at least one pair of first and second patterns on a wafer, the first pattern having an unexposed region surrounded by an exposed region, the second pattern having an exposed region surrounded by an unexposed region, and checking a focusing condition on exposure by measuring widths of the first and second patterns formed on the wafer.
Public/Granted literature
- US20060246359A1 Semiconductor device, fabricating method thereof, and photomask Public/Granted day:2006-11-02
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