Invention Grant
US07651829B2 Positive resist material and pattern formation method using the same
有权
正抗蚀剂材料和使用其的图案形成方法
- Patent Title: Positive resist material and pattern formation method using the same
- Patent Title (中): 正抗蚀剂材料和使用其的图案形成方法
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Application No.: US10854568Application Date: 2004-05-26
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Publication No.: US07651829B2Publication Date: 2010-01-26
- Inventor: Yoshitaka Hamada , Fujio Yagihashi , Mutsuo Nakashima , Kazumi Noda , Katsuya Takemura
- Applicant: Yoshitaka Hamada , Fujio Yagihashi , Mutsuo Nakashima , Kazumi Noda , Katsuya Takemura
- Applicant Address: JP Niigata-Ken
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Niigata-Ken
- Agency: Alston & Bird LLP
- Priority: JP2003-148471 20030527
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/36 ; G03F7/38

Abstract:
Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100° C. or greater.
Public/Granted literature
- US20040241579A1 Positive resist material and pattern formation method using the same Public/Granted day:2004-12-02
Information query
IPC分类: