Invention Grant
US07651884B2 Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer 失效
制造具有形成在布线层中的微透镜的CMOS图像传感器的方法

  • Patent Title: Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer
  • Patent Title (中): 制造具有形成在布线层中的微透镜的CMOS图像传感器的方法
  • Application No.: US11840065
    Application Date: 2007-08-16
  • Publication No.: US07651884B2
    Publication Date: 2010-01-26
  • Inventor: Jeong-Su Park
  • Applicant: Jeong-Su Park
  • Applicant Address: KR Seoul
  • Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: Sherr & Vaughn, PLLC
  • Priority: KR10-2006-0077957 20060818
  • Main IPC: H01L31/18
  • IPC: H01L31/18
Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer
Abstract:
A fabrication method of a CMOS image sensor provides forms micro lenses over a substrate by etching a plurality of holes in a wiring layer over a pixel area. An oxide layer is deposited to form a surface with a semi-circular cross section over the holes. The oxide layer may be etched away, leaving micro lenses formed in the wiring layer.
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