Invention Grant
US07651884B2 Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer
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制造具有形成在布线层中的微透镜的CMOS图像传感器的方法
- Patent Title: Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer
- Patent Title (中): 制造具有形成在布线层中的微透镜的CMOS图像传感器的方法
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Application No.: US11840065Application Date: 2007-08-16
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Publication No.: US07651884B2Publication Date: 2010-01-26
- Inventor: Jeong-Su Park
- Applicant: Jeong-Su Park
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2006-0077957 20060818
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A fabrication method of a CMOS image sensor provides forms micro lenses over a substrate by etching a plurality of holes in a wiring layer over a pixel area. An oxide layer is deposited to form a surface with a semi-circular cross section over the holes. The oxide layer may be etched away, leaving micro lenses formed in the wiring layer.
Public/Granted literature
- US20080044941A1 FABRICATING CMOS IMAGE SENSOR Public/Granted day:2008-02-21
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