Invention Grant
- Patent Title: Semiconductor device and manufacturing process thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11451997Application Date: 2006-06-12
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Publication No.: US07651886B2Publication Date: 2010-01-26
- Inventor: Jiun-Heng Wang
- Applicant: Jiun-Heng Wang
- Applicant Address: TW Hsinchu BM Hamilton
- Assignee: ChipMOS Technologies Inc.,ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee: ChipMOS Technologies Inc.,ChipMOS Technologies (Bermuda) Ltd.
- Current Assignee Address: TW Hsinchu BM Hamilton
- Agency: J.C. Patents
- Priority: TW95106753A 20060301
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50
Abstract:
A semiconductor device including a circuit structure and a protective layer is provided. The circuit structure has multiple contacts. The protective layer is located on the circuit structure and has multiple openings and multiple protrusions, wherein the contacts are exposed by the openings and the protrusions are located on the contacts.
Public/Granted literature
- US20070207608A1 Semiconductor device and manufacturing process thereof Public/Granted day:2007-09-06
Information query
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