Invention Grant
US07651900B2 Mask for making polysilicon structure, method of making the same, and method of making thin film transistor using the same
有权
用于制造多晶硅结构的掩模，及其制造方法以及使用其制造薄膜晶体管的方法
- Patent Title: Mask for making polysilicon structure, method of making the same, and method of making thin film transistor using the same
- Patent Title (中): 用于制造多晶硅结构的掩模，及其制造方法以及使用其制造薄膜晶体管的方法
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Application No.: US11194002Application Date: 2005-07-28
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Publication No.: US07651900B2Publication Date: 2010-01-26
- Inventor: Dong-byum Kim
- Applicant: Dong-byum Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2004-0059308 20040728
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A mask for making a polysilicon structure includes a transmitting area that transmits light and a blocking area that has a metal layer and a semiconductor layer deposited in an alternating manner at least once. The blocking area blocks light. The mask is subject to less thermal stress from the light (e.g., a laser beam) and therefore has a longer life span compared to a conventional mask.
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Information query
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