Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11951162Application Date: 2007-12-05
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Publication No.: US07651933B2Publication Date: 2010-01-26
- Inventor: Guee-Hwang Sim
- Applicant: Guee-Hwang Sim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0085417 20070824
- Main IPC: H01L21/22
- IPC: H01L21/22
Abstract:
A method of fabricating a semiconductor device includes providing a semiconductor substrate in which a gate insulating layer and a pad layer are formed in an active region. A first trench is formed in an isolation region of the substrate. A passivation film is formed to cover the pad layer and fill the first trench. A second trench is formed by patterning the pad layer and removing an exposed semiconductor substrate, the second trench being formed within the first trench. An ion implantation process is performed on the semiconductor substrate exposed through the second trench.
Public/Granted literature
- US20090053879A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2009-02-26
Information query
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