Invention Grant
US07651935B2 Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions
有权
形成电子器件的工艺，该电子器件包括覆盖有源区的不同组成的有源区和栅电极
- Patent Title: Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions
- Patent Title (中): 形成电子器件的工艺，该电子器件包括覆盖有源区的不同组成的有源区和栅电极
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Application No.: US11237346Application Date: 2005-09-27
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Publication No.: US07651935B2Publication Date: 2010-01-26
- Inventor: Olubunmi O. Adetutu , Tien Ying Luo , Narayanan C. Ramani
- Applicant: Olubunmi O. Adetutu , Tien Ying Luo , Narayanan C. Ramani
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/3205
- IPC: H01L21/3205
Abstract:
A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.
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