Invention Grant
- Patent Title: Method for forming a pattern of a semiconductor device
- Patent Title (中): 用于形成半导体器件的图案的方法
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Application No.: US12165388Application Date: 2008-06-30
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Publication No.: US07651950B2Publication Date: 2010-01-26
- Inventor: Keun Do Ban
- Applicant: Keun Do Ban
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0098451 20070928; KR10-2008-0060486 20080625
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
In a method for forming a fine pattern of a semiconductor device, forming a spacer for double patterning of a cell region is performed separate from forming a mask pattern that defines a dummy pattern for a pad of a peripheral circuit region.
Public/Granted literature
- US20090087959A1 METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE Public/Granted day:2009-04-02
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