Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus
- Patent Title (中): 半导体器件和半导体器件制造装置的制造方法
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Application No.: US11896231Application Date: 2007-08-30
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Publication No.: US07651954B2Publication Date: 2010-01-26
- Inventor: Tatsushi Ueda
- Applicant: Tatsushi Ueda
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-242103 20060906
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
To provide a manufacturing method of a semiconductor device for forming a diffusion layer by diffusing phosphorus atoms on a surface of a silicon substrate on which resist is applied, including the step of forming a diffusion layer, with a temperature of the silicon substrate maintained lower than a deterioration temperature of the resist.
Public/Granted literature
- US20080124941A1 Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus Public/Granted day:2008-05-29
Information query
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