Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10584032Application Date: 2004-12-07
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Publication No.: US07651958B2Publication Date: 2010-01-26
- Inventor: Yoshitsuga Morita , Katsutoshi Mine , Junji Nakanishi , Hiroji Enami
- Applicant: Yoshitsuga Morita , Katsutoshi Mine , Junji Nakanishi , Hiroji Enami
- Applicant Address: JP Tokyo
- Assignee: Dow Corning Toray Company, Ltd.
- Current Assignee: Dow Corning Toray Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Howard & Howard Attorneys PLLC
- Priority: JP2003-424821 20031222
- International Application: PCT/JP2004/018548 WO 20041207
- International Announcement: WO2005/062368 WO 20050707
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding, wherein the curable silicone composition comprises the following components: (A) an organopolysiloxane having at least two alkenyl groups per molecule; (B) an organopolysiloxane having at least two silicon-bonded hydrogen atoms per molecule; (C) a platinum-type catalyst; and (D) a filler, wherein either at least one of components (A) and (B) contains a T-unit siloxane and/or Q-unit siloxane. By the utilization this method, a sealed semiconductor device is free of voids in the sealing material, and a thickness of the cured silicone body can be controlled.
Public/Granted literature
- US20070216021A1 Semiconductor Device and Method of Manufacturing Thereof Public/Granted day:2007-09-20
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