Invention Grant
US07652179B2 Gas for plasma reaction, process for producing the same, and use thereof
有权
用于等离子体反应的气体，其制造方法及其用途
- Patent Title: Gas for plasma reaction, process for producing the same, and use thereof
- Patent Title (中): 用于等离子体反应的气体，其制造方法及其用途
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Application No.: US12007522Application Date: 2008-01-11
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Publication No.: US07652179B2Publication Date: 2010-01-26
- Inventor: Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
- Applicant: Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
- Applicant Address: JP Tokyo
- Assignee: Zeon Corporation
- Current Assignee: Zeon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Angell Palmer & Dodge LLP
- Priority: JP2001-342791 20011108; JP2002-081893 20020322
- Main IPC: C07C21/22
- IPC: C07C21/22
Abstract:
A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
Public/Granted literature
- US20080139855A1 Gas for plasma reaction, process for producing the same, and use thereof Public/Granted day:2008-06-12
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