Invention Grant
US07652288B2 Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
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Si1-X-YGEXCY和Si1-YCY合金层通过特高压CVD在Si上的外延和多晶生长
- Patent Title: Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
- Patent Title (中): Si1-X-YGEXCY和Si1-YCY合金层通过特高压CVD在Si上的外延和多晶生长
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Application No.: US12163389Application Date: 2008-06-27
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Publication No.: US07652288B2Publication Date: 2010-01-26
- Inventor: Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
- Applicant: Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon
Public/Granted literature
- US20090026459A1 EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY ALLOY LAYERS ON SI BY UHV-CVD Public/Granted day:2009-01-29
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