Invention Grant
- Patent Title: Method of making light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US11108966Application Date: 2005-04-19
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Publication No.: US07652302B2Publication Date: 2010-01-26
- Inventor: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant Address: TW
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Priority: TW94101800A 20050121
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.
Public/Granted literature
- US20060163599A1 Light emitting diode and fabricating method thereof Public/Granted day:2006-07-27
Information query
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