Invention Grant
US07652304B2 Contacting scheme for large and small area semiconductor light emitting flip chip devices
有权
大面积和小面积半导体发光倒装芯片器件的接触方案
- Patent Title: Contacting scheme for large and small area semiconductor light emitting flip chip devices
- Patent Title (中): 大面积和小面积半导体发光倒装芯片器件的接触方案
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Application No.: US11464794Application Date: 2006-08-15
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Publication No.: US07652304B2Publication Date: 2010-01-26
- Inventor: Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
- Applicant: Daniel A. Steigerwald , Jerome C. Bhat , Michael J. Ludowise
- Applicant Address: US CA San Jose
- Assignee: Philips Lumileds Lighting Company, LLC
- Current Assignee: Philips Lumileds Lighting Company, LLC
- Current Assignee Address: US CA San Jose
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting device includes a layer of first conductivity type, a layer of second conductivity type, and a light emitting layer disposed between the layer of first conductivity type and the layer of second conductivity type. A via is formed in the layer of second conductivity type, down to the layer of first conductivity type. The vias may be formed by, for example, etching, ion implantation, diffusion, or selective growth of at least one layer of second conductivity type. A first contact electrically contacts the layer of first conductivity type through the via. A second contact electrically contacts the layer of second conductivity type. A ring that surrounds the light emitting layer and is electrically connected to the first contact electrically contacts the layer of first conductivity type.
Public/Granted literature
- US20060273339A1 Contacting Scheme for Large and Small Area Semiconductor Light Emitting Flip Chip Devices Public/Granted day:2006-12-07
Information query
IPC分类:
