Invention Grant
- Patent Title: Deep trench contact and isolation of buried photodetectors
- Patent Title (中): 深沟槽接触和隔离掩埋光电探测器
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Application No.: US11164098Application Date: 2005-11-10
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Publication No.: US07652313B2Publication Date: 2010-01-26
- Inventor: John J. Ellis-Monaghan , Jeffrey P. Gambino , Jeffrey B. Johnson , Jerome B. Lasky
- Applicant: John J. Ellis-Monaghan , Jeffrey P. Gambino , Jeffrey B. Johnson , Jerome B. Lasky
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H01L31/062
- IPC: H01L31/062
Abstract:
The invention provides vertically-stacked photodiodes buried in a semiconductor material that are isolated and selectively contacted by deep trenches. One embodiment of the invention provides a pixel sensor comprising: a plurality of photosensitive elements formed in a substrate, each photosensitive element being adapted to generate photocharges in response to electromagnetic radiation; and a plurality of photocharge transfer devices, each photocharge transfer device being coupled to at least one of the plurality of photosensitive elements.
Public/Granted literature
- US20070102740A1 DEEP TRENCH CONTACT AND ISOLATION OF BURIED PHOTODETECTORS Public/Granted day:2007-05-10
Information query
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