Invention Grant
- Patent Title: Thin-film device and method of manufacturing same
- Patent Title (中): 薄膜器件及其制造方法
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Application No.: US11583074Application Date: 2006-10-19
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Publication No.: US07652349B2Publication Date: 2010-01-26
- Inventor: Hajime Kuwajima , Masahiro Miyazaki , Akira Furuya
- Applicant: Hajime Kuwajima , Masahiro Miyazaki , Akira Furuya
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-327643 20051111
- Main IPC: H01L29/41
- IPC: H01L29/41

Abstract:
A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.
Public/Granted literature
- US20070108553A1 Thin-film device and method of manufacturing same Public/Granted day:2007-05-17
Information query
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