Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing semiconductor devices
- Patent Title (中): 半导体器件和制造半导体器件的方法
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Application No.: US11555381Application Date: 2006-11-01
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Publication No.: US07652354B2Publication Date: 2010-01-26
- Inventor: Tae Young Lee
- Applicant: Tae Young Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2005-0104311 20051102
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed is a semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an insulating layer and a metal interconnection. An insulating layer may include a first layer including fluorine and a second layer including SRO (silicon rich oxide) having a dangling bond. A metal interconnection may be formed over the insulating layer.
Public/Granted literature
- US20070123030A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2007-05-31
Information query
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