Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11790155Application Date: 2007-04-24
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Publication No.: US07652375B2Publication Date: 2010-01-26
- Inventor: Koji Soejima , Yoichiro Kurita , Masaya Kawano , Shintaro Yamamichi , Katsumi Kikuchi
- Applicant: Koji Soejima , Yoichiro Kurita , Masaya Kawano , Shintaro Yamamichi , Katsumi Kikuchi
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Young & Thompson
- Priority: JP2006-121575 20060426
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
Public/Granted literature
- US20080136020A1 Semiconductor device and method of manufacturing the same Public/Granted day:2008-06-12
Information query
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