Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US11522440Application Date: 2006-09-18
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Publication No.: US07652377B2Publication Date: 2010-01-26
- Inventor: Tetsuo Yaegashi , Kouichi Nagai
- Applicant: Tetsuo Yaegashi , Kouichi Nagai
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/76
Abstract:
A seal ring (102) is formed in a manner to surround each ferroelectric capacitor (101). Additionally, a seal ring (103) is formed in a manner to surround a plurality of ferroelectric capacitors (101). Further, a seal ring (104) is formed in a manner to surround all of the ferroelectric capacitors (101) and along a dicing line (110) inside the dicing line (110).
Public/Granted literature
- US20070012976A1 Semiconductor device and manufacturing method of the same Public/Granted day:2007-01-18
Information query
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