Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12180597Application Date: 2008-07-28
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Publication No.: US07652385B2Publication Date: 2010-01-26
- Inventor: Kazunori Kuramoto
- Applicant: Kazunori Kuramoto
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-194127 20070726
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/12 ; H01L23/06 ; H01L23/04
Abstract:
Aiming at providing a semiconductor device advanced in performance of transistors, and improved in reliability, a semiconductor device of the present invention has a semiconductor element, a frame component provided over the semiconductor element, while forming a cavity therein, and a molding resin layer covering around the frame component, wherein the frame component is composed of a plurality of resin films (a first resin film and a second resin film) containing the same resin, and the cavity allows the active region of the semiconductor element to expose therein.
Public/Granted literature
- US20090026589A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-01-29
Information query
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