Invention Grant
US07652519B2 Apparatus and method for exploiting reverse short channel effects in transistor devices
有权
在晶体管器件中利用反向短沟道效应的装置和方法
- Patent Title: Apparatus and method for exploiting reverse short channel effects in transistor devices
- Patent Title (中): 在晶体管器件中利用反向短沟道效应的装置和方法
-
Application No.: US11449460Application Date: 2006-06-08
-
Publication No.: US07652519B2Publication Date: 2010-01-26
- Inventor: Torkel Arnborg
- Applicant: Torkel Arnborg
- Applicant Address: SE Stockholm
- Assignee: Telefonaktiebolaget LM Ericsson (publ)
- Current Assignee: Telefonaktiebolaget LM Ericsson (publ)
- Current Assignee Address: SE Stockholm
- Agency: Coats & Bennett, P.L.L.C.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H04B1/28

Abstract:
A method of implementing a transistor circuit comprises coupling first and second transistors in parallel, wherein the first transistor has a channel length corresponding to a peak in the transistor's voltage threshold curve arising from reverse short channel effects, and the second transistor has a longer channel length and, therefore, a lower threshold voltage. Exploiting reverse short channel effects in this manner enables the implementation of “composite” transistor circuits that exhibit improved linearity.
Public/Granted literature
- US20070287404A1 Apparatus and method for exploiting reverse short channel effects in transistor devices Public/Granted day:2007-12-13
Information query
IPC分类: