Invention Grant
- Patent Title: High efficiency low cost bi-directional charge pump circuit for very low voltage applications
- Patent Title (中): 高效率低成本双向电荷泵电路,用于极低电压应用
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Application No.: US11515637Application Date: 2006-09-05
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Publication No.: US07652522B2Publication Date: 2010-01-26
- Inventor: Emmanuel Racape
- Applicant: Emmanuel Racape
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A method and system for providing an output voltage greater than a voltage of a voltage supply in a semiconductor device are disclosed. The method and system include providing basic stage(s) and/or a bi-directional stage and basic stage(s) coupled with the bi-directional stage. The bi-directional stage includes boosting capacitors, N-type devices, and an interface and allows operation in positive or negative configurations. A first of the basic stage(s) is coupled with the interface. The basic stage includes first and second sections. The first section includes pumping node(s) coupled with pumping capacitor(s), device(s) coupled with the pumping node(s), and auxiliary capacitors for providing an overshoot for the device(s) for value(s) of the clock signals. The second section is analogous to the first section. A clock provides clock signals to the first and second sections and the bi-directional stage. The first and second sections alternately charge and fully discharge based on the clock signals.
Public/Granted literature
- US20080122506A1 High efficiency low cost bi-directional charge pump circuit for very low voltage applications Public/Granted day:2008-05-29
Information query
IPC分类: