Invention Grant
- Patent Title: Tunneling magnetic sensing element having two-layer insulating film
- Patent Title (中): 具有双层绝缘膜的隧道磁感应元件
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Application No.: US11421709Application Date: 2006-06-01
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Publication No.: US07652857B2Publication Date: 2010-01-26
- Inventor: Kiyoshi Sato
- Applicant: Kiyoshi Sato
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2005-168218 20050608
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/33

Abstract:
A magnetic sensing element is provided. The magnetic sensing element includes a laminate disposed on a conductive layer. The laminate having a structure including a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer disposed in that order from the bottom, first insulating films disposed at both sides in the track width direction of the laminate, second insulating films disposed on the conductive layer, the second insulating films being connected to the respective first insulating films, bias layers disposed over the respective first insulating films and the respective second insulating films, wherein the thickness in the track width direction of the first insulating film is smaller than the thickness of the second insulating film.
Public/Granted literature
- US20060279881A1 TUNNELING MAGNETIC SENSING ELEMENT HAVING TWO-LAYER INSULATING FILM AND METHOD FOR FABRICATING SAME Public/Granted day:2006-12-14
Information query
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