Invention Grant
- Patent Title: Flash memory array architecture
- Patent Title (中): 闪存阵列架构
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Application No.: US11969812Application Date: 2008-01-04
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Publication No.: US07652905B2Publication Date: 2010-01-26
- Inventor: Jian-Yuan Shen , Chi-Ling Chu , Chou-Ying Yang
- Applicant: Jian-Yuan Shen , Chi-Ling Chu , Chou-Ying Yang
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G11C5/06
- IPC: G11C5/06

Abstract:
A memory device comprises a memory array of memory cells for storing data and an information array of information cells for storing operating information. The information array is coupled to the memory array so that the information array and the memory array share the same data path circuitry for reading, erase or programming operations. A power-on control circuit controls the operation of the information array.
Public/Granted literature
- US20080165584A1 Flash Memory Array Architecture Public/Granted day:2008-07-10
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