Invention Grant
- Patent Title: Memory device employing magnetic domain wall movement
- Patent Title (中): 采用磁畴壁运动的记忆装置
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Application No.: US11851049Application Date: 2007-09-06
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Publication No.: US07652906B2Publication Date: 2010-01-26
- Inventor: Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
- Applicant: Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0089651 20060915
- Main IPC: G11C19/00
- IPC: G11C19/00
Abstract:
Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.
Public/Granted literature
- US20080068881A1 MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT Public/Granted day:2008-03-20
Information query
