Invention Grant
- Patent Title: Semiconductor light emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12165674Application Date: 2008-07-01
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Publication No.: US07653098B2Publication Date: 2010-01-26
- Inventor: Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
- Applicant: Tsutomu Yamaguchi , Yoshihisa Tashiro , Kenzo Mori , Hiroo Sakamoto , Takehiro Nishida
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2007-304803 20071126
- Main IPC: H01S3/00
- IPC: H01S3/00 ; H01S5/00

Abstract:
A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.
Public/Granted literature
- US20090135878A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-05-28
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