A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.