Invention Grant
US07653105B2 Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
有权
半导体激光器，半导体激光器的制造方法，光学拾取器和光盘系统
- Patent Title: Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
- Patent Title (中): 半导体激光器，半导体激光器的制造方法，光学拾取器和光盘系统
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Application No.: US11936431Application Date: 2007-11-07
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Publication No.: US07653105B2Publication Date: 2010-01-26
- Inventor: Masaru Kuramoto
- Applicant: Masaru Kuramoto
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2006-303672 20061109
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the p-side optical waveguide layer; and a p-side clad layer over the electron barrier layer. A ridge stripe is formed at an upper part of the p-side optical waveguide layer, the electron barrier layer and the p-side clad layer, and the distance between the electron barrier layer and a bottom surface in areas on both sides of the ridge stripe is not less than 10 nm.
Public/Granted literature
- US20080117945A1 SEMICONDUCTOR LASER, METHOD OF MANUFACTURING SEMICONDUCTOR LASER, OPTICAL PICKUP AND OPTICAL DISK SYSTEM Public/Granted day:2008-05-22
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