Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12104756Application Date: 2008-04-17
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Publication No.: US07653107B2Publication Date: 2010-01-26
- Inventor: Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
- Applicant: Yoshihiro Hisa , Tsutomu Yamaguchi , Takehiro Nishida , Kenji Hiramatsu
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2007-185614 20070717
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.
Public/Granted literature
- US20090022197A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-01-22
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