Invention Grant
- Patent Title: Semiconductor laser device
- Patent Title (中): 半导体激光器件
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Application No.: US11384559Application Date: 2006-03-21
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Publication No.: US07653317B2Publication Date: 2010-01-26
- Inventor: Yutaka Ohki , Naoki Tsukiji , Hidehiro Taniguchi
- Applicant: Yutaka Ohki , Naoki Tsukiji , Hidehiro Taniguchi
- Applicant Address: JP Tokyo
- Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee: The Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-335459 20030926
- Main IPC: H04B10/04
- IPC: H04B10/04

Abstract:
A first light feedback element is arranged at an optical distance L1 from a front facet of a semiconductor laser from which an output light is emitted on an optical path of the output light. An i-th light feedback element is arranged at an optical distance Li from the front facet on the optical path of the output light, where i=2 to n, n is a positive integer not less than 2, and Li>L1. L1 and Li satisfies ((M−1)+0.01)
Public/Granted literature
- US20060176922A1 Semiconductor laser device Public/Granted day:2006-08-10
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