Invention Grant
- Patent Title: Substrate processing system, substrate processing method, and storage medium
- Patent Title (中): 基板处理系统，基板处理方法和存储介质
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Application No.: US11671821Application Date: 2007-02-06
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Publication No.: US07654010B2Publication Date: 2010-02-02
- Inventor: Tsuyoshi Moriya , Kazuya Nagaseki
- Applicant: Tsuyoshi Moriya , Kazuya Nagaseki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-046696 20060223
- Main IPC: F26B3/00
- IPC: F26B3/00
Abstract:
A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.
Public/Granted literature
- US20070193062A1 SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM Public/Granted day:2007-08-23
Information query
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