Invention Grant
- Patent Title: Method of fabricating thin film transistor
- Patent Title (中): 制造薄膜晶体管的方法
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Application No.: US11563454Application Date: 2006-11-27
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Publication No.: US07655127B2Publication Date: 2010-02-02
- Inventor: Michael W. Bench , Steven D. Theiss , Grace L. Ho
- Applicant: Michael W. Bench , Steven D. Theiss , Grace L. Ho
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN St. Paul
- Agent Robert S. Moshrefzadeh
- Main IPC: C25D5/48
- IPC: C25D5/48

Abstract:
Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
Public/Granted literature
- US20080121528A1 METHOD OF FABRICATING THIN FILM TRANSISTOR Public/Granted day:2008-05-29
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