Invention Grant
US07655127B2 Method of fabricating thin film transistor 有权
制造薄膜晶体管的方法

Method of fabricating thin film transistor
Abstract:
Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
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