Invention Grant
US07655157B2 Doped cadmium tungstate scintillator with improved radiation hardness
失效
掺杂的钨酸镉闪烁体具有改善的辐射硬度
- Patent Title: Doped cadmium tungstate scintillator with improved radiation hardness
- Patent Title (中): 掺杂的钨酸镉闪烁体具有改善的辐射硬度
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Application No.: US11973867Application Date: 2007-10-09
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Publication No.: US07655157B2Publication Date: 2010-02-02
- Inventor: Shifan Cheng , Yi-Qun Li
- Applicant: Shifan Cheng , Yi-Qun Li
- Applicant Address: US CA Fremont
- Assignee: Intematix Corporation
- Current Assignee: Intematix Corporation
- Current Assignee Address: US CA Fremont
- Agency: Quine Intellectual Property Law Group
- Agent Gary Baker
- Main IPC: C09K11/68
- IPC: C09K11/68
Abstract:
This invention provides novel cadmium tungstate scintillator materials that show improved radiation hardness. In particular, it was discovered that doping of cadmium tungstate (CdWO4) with trivalent metal ions or monovalent metal ions is particularly effective in improving radiation hardness of the scintillator material.
Public/Granted literature
- US20080210874A1 Doped cadmium tungstate scintillator with improved radiation hardness Public/Granted day:2008-09-04
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