Invention Grant
US07655197B2 III-V nitride substrate boule and method of making and using the same
有权
III-V族氮化物衬底棒及其制造和使用方法
- Patent Title: III-V nitride substrate boule and method of making and using the same
- Patent Title (中): III-V族氮化物衬底棒及其制造和使用方法
-
Application No.: US10369846Application Date: 2003-02-19
-
Publication No.: US07655197B2Publication Date: 2010-02-02
- Inventor: Robert P. Vaudo , Jeffrey S. Flynn , George R. Brandes , Joan M. Redwing , Michael A. Tischler
- Applicant: Robert P. Vaudo , Jeffrey S. Flynn , George R. Brandes , Joan M. Redwing , Michael A. Tischler
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Intellectual Property/Technology Law
- Agent Vincent K. Gustafson
- Main IPC: B01D9/00
- IPC: B01D9/00 ; F27B15/08 ; A61L2/00 ; C30B23/00 ; C30B29/38
Abstract:
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
Public/Granted literature
- US20030157376A1 III-V nitride substrate boule and method of making and using the same Public/Granted day:2003-08-21
Information query
