Invention Grant
- Patent Title: Single crystalline diamond and producing method thereof
- Patent Title (中): 单晶金刚石及其制造方法
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Application No.: US11402062Application Date: 2006-04-12
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Publication No.: US07655208B2Publication Date: 2010-02-02
- Inventor: Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
- Applicant: Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-117948 20050415; JP2006-060511 20060307
- Main IPC: B01J3/06
- IPC: B01J3/06 ; C01B31/00 ; C30B29/04 ; G11B5/65

Abstract:
The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
Public/Granted literature
- US20060231015A1 Single crystalline diamond and producing method thereof Public/Granted day:2006-10-19
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