An electro-magnetic storage device and method are disclosed. In one embodiment, a memory device includes a first magnetic material to attract a movable structure (e.g., a ferromagnetic material) when a first voltage is applied between the first magnetic material and the movable structure, and a second magnetic material to release the movable structure when a second voltage is applied between the second magnetic material and the movable structure. The movable arm may create a closed circuit when the second voltage is applied between the second magnetic material and the movable structure. There may be a vacuum-gap between the movable structure and at least one of the first magnetic material and/or the second magnetic material. The memory device may be stackable on other memory devices having similar properties, and/or electrically coupled with other memory devices having similar properties in a memory array.