Invention Grant
- Patent Title: Composition comprising rare-earth dielectric
- Patent Title (中): 包含稀土电介质的组合物
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Application No.: US11253525Application Date: 2005-10-19
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Publication No.: US07655327B2Publication Date: 2010-02-02
- Inventor: Petar Atanackovic
- Applicant: Petar Atanackovic
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Fernandez & Associates, LLP
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00
Abstract:
Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure.
Public/Granted literature
- US20060060826A1 Composition comprising rare-earth dielectric Public/Granted day:2006-03-23
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