Invention Grant
- Patent Title: Method and apparatus for solving mask precipitated defect issue
- Patent Title (中): 解决掩模沉淀缺陷问题的方法和装置
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Application No.: US11413447Application Date: 2006-04-28
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Publication No.: US07655363B2Publication Date: 2010-02-02
- Inventor: Yi-Ming Dai
- Applicant: Yi-Ming Dai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G02B26/00
- IPC: G02B26/00 ; G02F1/155 ; G03F1/00

Abstract:
Disclosed are a method and an apparatus for solving mask precipitated defect issue. A gas is purged into a photomask reticle assembly for diffusing precipitated defects out of a photomask in the photomask reticle assembly. A metal shielding assembly enclosing the photomask reticle assembly is provided for reducing precipitated defects and damages to the photomask. In an illustrative embodiment, the metal shielding assembly comprises an upper metal shielding, a pellicle frame of the photomask reticle assembly, side support frames of the photomask reticle assembly, a top cover, a handle, and a handle cover.
Public/Granted literature
- US20070254217A1 Method and apparatus for solving mask precipitated defect issue Public/Granted day:2007-11-01
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