Invention Grant
- Patent Title: Negative resist composition and patterning process using the same
- Patent Title (中): 负光刻胶组合物和使用其的图案化工艺
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Application No.: US11808706Application Date: 2007-06-12
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Publication No.: US07655378B2Publication Date: 2010-02-02
- Inventor: Jun Hatakeyama , Takanobu Takeda
- Applicant: Jun Hatakeyama , Takanobu Takeda
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-200957 20060724
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/004 ; G03F7/20 ; G03F7/30

Abstract:
There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.
Public/Granted literature
- US20080020290A1 Negative resist composition and patterning process using the same Public/Granted day:2008-01-24
Information query
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