Invention Grant
- Patent Title: Methods for reducing spherical aberration effects in photolithography
- Patent Title (中): 降低光刻中的球面像差效应的方法
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Application No.: US11516423Application Date: 2006-09-05
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Publication No.: US07655384B2Publication Date: 2010-02-02
- Inventor: Pary Baluswamy
- Applicant: Pary Baluswamy
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G01B9/00
- IPC: G01B9/00
Abstract:
Methods to at least partially compensate for photoresist-induced spherical aberration that occurs during mask imaging used for photolithographic processing of semiconductor devices, LCD elements, thin-film magnetic heads, reticles and other substrates including photo-defined structures thereon are disclosed. A photoresist or other photosensitive material may be irradiated with a mask pattern image including a selected nonzero spherical aberration value to compensate for photoresist-induced spherical aberration.
Public/Granted literature
- US20070002312A1 Methods for reducing spherical aberration effects in photolithography Public/Granted day:2007-01-04
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