Invention Grant
- Patent Title: Mask and method to pattern chromeless phase lithography contact hole
- Patent Title (中): 掩模和方法来绘制无铬相光刻接触孔
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Application No.: US11028421Application Date: 2005-01-03
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Publication No.: US07655388B2Publication Date: 2010-02-02
- Inventor: Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Hury Ming Chong , Liang Choo Hsia
- Applicant: Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Hury Ming Chong , Liang Choo Hsia
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: G03F9/00
- IPC: G03F9/00

Abstract:
A chromeless phase shift mask and Method for making and using. The A chromeless phase shift mask is used to pattern contact holes. The chromeless phase shift mask preferably comprises: a first phase shift region and a second phase shift region; the first region is comprised of a unit cell which is comprised of a rectangular center section and at least three rectangular sections (legs) outwards extending from the rectangular center section. The second region is adjacent to said first region. The interference between the first and second phase shift regions creates a contact hole pattern.
Public/Granted literature
- US20060147813A1 Mask and method to pattern chromeless phase lithography contact hole Public/Granted day:2006-07-06
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