Invention Grant
- Patent Title: Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips
- Patent Title (中): 制造多个电磁辐射半导体芯片的方法
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Application No.: US12290097Application Date: 2008-10-27
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Publication No.: US07655488B2Publication Date: 2010-02-02
- Inventor: Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
- Applicant: Stefan Bader , Dominik Eisert , Berthold Hahn , Stephan Kaiser
- Applicant Address: DE Munich
- Assignee: Osram GmbH
- Current Assignee: Osram GmbH
- Current Assignee Address: DE Munich
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE10245628 20020930
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.
Public/Granted literature
- US20090130787A1 Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips Public/Granted day:2009-05-21
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