Invention Grant
- Patent Title: Multi spectral sensor
- Patent Title (中): 多光谱传感器
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Application No.: US11182310Application Date: 2005-07-14
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Publication No.: US07655493B2Publication Date: 2010-02-02
- Inventor: David D. Wen , Xinqiao Liu , Ahn N. Vu , Steven Kiyoshi Onishi
- Applicant: David D. Wen , Xinqiao Liu , Ahn N. Vu , Steven Kiyoshi Onishi
- Applicant Address: US CA Milpitas
- Assignee: Fairchild Imaging, Inc
- Current Assignee: Fairchild Imaging, Inc
- Current Assignee Address: US CA Milpitas
- Agent Calvin B. Ward
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/148 ; H01L29/768

Abstract:
A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.
Public/Granted literature
- US20070015301A1 Multi spectral sensor Public/Granted day:2007-01-18
Information query
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