Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11437606Application Date: 2006-05-22
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Publication No.: US07655505B2Publication Date: 2010-02-02
- Inventor: Kazuo Teshirogi , Yuzo Shimobeppu , Kazuhiro Yoshimoto , Yoshiaki Shinjo
- Applicant: Kazuo Teshirogi , Yuzo Shimobeppu , Kazuhiro Yoshimoto , Yoshiaki Shinjo
- Applicant Address: JP Tokyo
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-041025 20060217
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A manufacturing method of a semiconductor device, includes i) a step of providing a transparent member above a main surface of a semiconductor substrate where a plurality of semiconductor elements is formed; ii) a first dividing step of dividing the transparent member corresponding to a designated area of the semiconductor element; iii) a second dividing step of dividing the transparent member corresponding to an external configuration of the semiconductor element; and iv) a dividing step of dividing the semiconductor substrate into the semiconductor elements corresponding to a dividing position of the transparent member.
Public/Granted literature
- US20070196954A1 Manufacturing method of semiconductor device Public/Granted day:2007-08-23
Information query
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