Invention Grant
US07655509B2 Silicide-silicon oxide-semiconductor antifuse device and method of making
有权
硅化硅 - 氧化硅半导体反熔丝装置及其制造方法
- Patent Title: Silicide-silicon oxide-semiconductor antifuse device and method of making
- Patent Title (中): 硅化硅 - 氧化硅半导体反熔丝装置及其制造方法
-
Application No.: US11898622Application Date: 2007-09-13
-
Publication No.: US07655509B2Publication Date: 2010-02-02
- Inventor: S. Brad Herner
- Applicant: S. Brad Herner
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
An antifuse contains a first silicide layer, a grown silicon oxide antifuse layer on a first surface of the first silicide layer, and a first semiconductor layer having a first surface in contact with the antifuse layer.
Public/Granted literature
- US20080009105A1 Silicide-silicon oxide-semiconductor antifuse device and method of making Public/Granted day:2008-01-10
Information query
IPC分类:
